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MBR1090CT, MBR10100CT
Vishay General Semiconductor
Document Number: 89125
Revision: 26-Apr-10
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1
New Product
Dual Common-Cathode High Voltage Schottky Rectifier
FEATURES
? Trench MOS Schottky technology
Lower power losses, high efficiency
Low forward voltage drop
High forward surge capability
High frequency operation
Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application
MECHANICAL DATA
Case:
TO-220AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked
Mounting Torque:
10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV)
2 x 5.0 A
VRRM
90 V, 100 V
IFSM
120 A
VF
0.75 V
TJ max. 150 °C
TO-220AB
CASE
PIN 2
PIN 1
PIN 3
1
2
3
TMBS?
MAXIMUM RATINGS
(TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR1090CT MBR10100CT UNIT
Maximum repetitive peak reverse voltage VRRM
90 100 V
Working peak reverse voltage VRWM
90 100 V
Maximum DC blocking voltage VDC
90 100 V
Maximum average forward rectified current at TC
= 105 °C
total device
per diode
IF(AV)
10
5.0
A
Peak forward surge current 8.3 ms
single half sine-wave superimposed
on rated load per diode
IFSM
120 A
Non-repetitive avalanche energy
at TJ
= 25 °C, L = 60 mH per diode
EAS
60 mJ
Peak repetitive reverse current at tp
= 2 μs, 1 kHz,
TJ
= 38 °C ± 2 °C per diode
IRRM
0.5 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG
- 65 to + 150 °C
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